Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

Home
Products
About Us
Factory Tour
Quality Control
Contact Us
Request A Quote
Home ProductsPower Mosfet Transistor

Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

I'm Online Chat Now

Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

China Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V supplier

Large Image :  Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

Product Details:

Place of Origin: China
Brand Name: ALPHA
Certification: Original Factory Pack
Model Number: AO3400A

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: negotiation
Packaging Details: please contact me for details
Delivery Time: 1 Day
Payment Terms: T/T in advance or others, Western Union,Payapl
Supply Ability: 5200PCS
Contact Now
Detailed Product Description
Shipment:: DHL, Fedex, TNT, EMS Etc Main Line:: Ic,module,transistor,diodes,capacitor,resistor Etc
Gate-Source Voltage: ±12 V Drain-Source Voltage: 30V
Temperature Range: -55 To 150 °C Temperature Range: -55 To 150 °C
Power Dissipation: 0.9 To 1.4W Power Dissipation: 0.9 To 1.4W
Continuous Drain Current: 4.7 To 5.7 A Package: SOT-23 (TO-236)
Continuous Drain Current: 4.7 To 5.7 A

Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

 

 

AO3400A N

- Channel Enhancement Mode Field Effect Transistor

 

General Description Feature
The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).

VDS (V) = 30V

ID = 5.7A (VGS = 10V)

RDS(ON) < 26.5mΩ (VGS = 10V)

RDS(ON) < 32mΩ (VGS = 4.5V)

RDS(ON) < 48mΩ (VGS = 2.5V)

 

Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

Thermal Characteristics

 

Parameter Symbol Typ Max Unit
Maximum Junction-to-Ambient A t ≤ 10s RθJA

70

90 °C/W
Maximum Junction-to-Ambient A Steady-State 100 125 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 63 80 °C/W

 

A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.

F: The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Apr. 2007

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

Send your inquiry directly to us (0 / 3000)