Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification

China K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification supplier

Large Image :  K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: K4H561638H-UCB3

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 7700pcs
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Detailed Product Description
Voltage On Any Pin Relative To Vss: -0.5 ~ 3.6 V Storage Temperature: -55 ~ +150 °C
Power Dissipation: 1.5 W Short Circuit Current: 50 MA
Input Leakage Current: -2 To 2 UA Output Leakage Current: -5 To 5 UA
High Light:

electronic integrated circuit

,

linear integrated circuits

 

K4H560438H K4H560838H K4H561638H

256Mb H-die DDR SDRAM Specification

 

66 TSOP-II with Pb-Free (RoHS compliant)

 

Key Features

• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333

• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)

• Four banks operation

• Differential clock inputs(CK and CK)

• DLL aligns DQ and DQS transition with CK transition

 

• MRS cycle with address key programs

  -. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)

  -. Burst length (2, 4, 8)

  -. Burst type (sequential & interleave)

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)

• Data I/O transactions on both edges of data strobe

• Edge aligned data output, center aligned data input

 

• LDM,UDM for write masking only (x16)

• DM for write masking only (x4, x8)

• Auto & Self refresh

• 7.8us refresh interval(8K/64ms refresh)

• Maximum burst refresh cycle : 8

• 66pin TSOP II Pb-Free package

• RoHS compliant

 

General Description

The K4H560438H / K4H560838H / K4H561638H is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 / 4x 4,194,304 words by 4/8/16bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

 

Absolute Maximum Rating

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 1.5 W
Short circuit current IOS 50 mA

Note :

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommend operation condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

 

Package Physical Dimension

K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification

 

 

 

 

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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