Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
|
Voltage On Any Pin Relative To Vss: | -0.5 ~ 3.6 V | Storage Temperature: | -55 ~ +150 °C |
---|---|---|---|
Power Dissipation: | 1.5 W | Short Circuit Current: | 50 MA |
Input Leakage Current: | -2 To 2 UA | Output Leakage Current: | -5 To 5 UA |
High Light: | electronic integrated circuit,linear integrated circuits |
K4H560438H K4H560838H K4H561638H
256Mb H-die DDR SDRAM Specification
66 TSOP-II with Pb-Free (RoHS compliant)
Key Features
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM for write masking only (x16)
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II Pb-Free package
• RoHS compliant
General Description
The K4H560438H / K4H560838H / K4H561638H is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 / 4x 4,194,304 words by 4/8/16bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Absolute Maximum Rating
Parameter | Symbol | Value | Unit |
---|---|---|---|
Voltage on any pin relative to VSS | VIN, VOUT | -0.5 ~ 3.6 | V |
Voltage on VDD & VDDQ supply relative to VSS | VDD, VDDQ | -1.0 ~ 3.6 | V |
Storage temperature | TSTG | -55 ~ +150 | °C |
Power dissipation | PD | 1.5 | W |
Short circuit current | IOS | 50 | mA |
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Package Physical Dimension
Stock Offer (Hot Sell)
Part no. | Quantity | Brand | D/C | Package |
BFS481 | 9000 | 15+ | SOT363 | |
LS1240AD1013TR | 7442 | ST | 10+ | SOP-8 |
PCA9534PW | 12180 | TI | 16+ | TSSOP |
PIC18F14K22-I/SO | 4678 | MICROCHIP | 16+ | SOP |
PIC16F886-I/SS | 4783 | MICROCHIP | 16+ | SSOP |
LM7824CT | 7074 | NSC | 15+ | TO-220 |
PIC16F88-I/P | 4763 | MICROCHIP | 10+ | DIP |
MPX5500DP | 6113 | FREESCALE | 15+ | SIP |
XC9572XL-10PC44C | 882 | XILINX | 10+ | PLCC44 |
L9150 | 1937 | ST | 15+ | ZIP |
XL6019E1 | 5000 | XLSEMI | 14+ | TO263-5L |
NUF6400MNTBG | 5200 | ON | 16+ | QFN |
M24M02-DRMN6TP | 4504 | ST | 15+ | SOP |
LM2747MTC | 3000 | NSC | 10+ | TSSOP-14 |
XC2C256-7FT256I | 200 | XILINX | 12+ | BGA |
LT1963ES8 | 12062 | LT | 10+ | SOP-8 |
LP2960IMX-3.3 | 3651 | NSC | 15+ | SOP-16 |
40069* | 1662 | BOSCH | 15+ | QFP64 |
LM3812M-7.0 | 1201 | NSC | 13+ | SOP-8 |
NLAS4599DFT2 | 30000 | ON | 16+ | SOT |
MMBF170LT1G | 25000 | ON | 16+ | SOT-23 |
MAX6006BESA+ | 3527 | MAXIM | 16+ | SOP |
MC14528BDR2G | 30000 | ON | 16+ | SOP |
MSE1PJ-E3/89A | 38000 | VISHAY | 16+ | SMD |
LM2940CT-12 | 6960 | NSC | 15+ | TO-220 |
ZVP4424ZTA | 5000 | DIODES | 12+ | TO-89 |
MCP41010-I/P | 5332 | MICROCHIP | 15+ | DIP |
MAX4426CPA | 13900 | MAXIM | 16+ | DIP |
MCP1702T-3302E/MB | 10000 | MICROCHIP | 16+ | SOT-89 |
LM9076SX-3.3 | 926 | NSC | 14+ | TO-263 |
High Power Rectifier Diode 1N4756A , Silicon Planar Zener Diodes
Bridge Type Rectifier Diode 1N4007 50 to 1000 Volts 1.0 Ampere
1N4742A Silicon Planar Zener Diodes for Stabilized Power Supply
Power Programmable IC Chips XC6SLX100-3FGG484C Spartan-6 Family Overview
128K Bytes Sound IC Chip Programming ATMEGA128-16AU 8 Bit Microcontroller
EMC Programmable IC Chips Compliant Slew Rate Limited EI , Timer IC Chip
SMD Power Mosfet Module L7812CV TO-220 Power Trans Electronic Compoents
2SD1594 3 Pin Transistor NEC NPN Power Transistor Switching High Speed
2N5459 Power Mosfet Transistor N-Channel To-92 Original Stock FSC