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Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM

China K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM supplier

Large Image :  K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: K6R1008V1D-TI10

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8600pcs
Detailed Product Description
Supply Voltage: 5.0 V Voltage On Any Pin Relative To VSS: -0.5 To Vcc+0.5V V
Voltage On VCC Supply Relative To VSS: -0.5 To 7.0 V Power Dissipation: 1 W
Storage Temperature: -65 To 150 °C Operating Temperature (Industrial): -40 To 85 °C
Highlight:

digital integrated circuits

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linear integrated circuits

 

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

 

FEATURES

• Fast Access Time 10ns(Max.)

• Power Dissipation

   Standby (TTL) : 20mA(Max.)

                 (CMOS) : 5mA(Max.)

   Operating K6R1004C1D-10: 65mA(Max.)

• Single 5.0V±10% Power Supply

• TTL Compatible Inputs and Outputs

• I/O Compatible with 3.3V Device

• Fully Static Operation - No Clock or Refresh required

• Three State Outputs

• Center Power/Ground Pin Configuration

• Standard Pin Configuration :

       K6R1004C1C-J : 32-SOJ-400

       K6R1004C1C-K : 32-SOJ-400(Lead-Free)

• Operating in Commercial and Industrial Temperature range.

 

GENERAL DESCRIPTION

The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1004C1D is packaged in a 400 mil 32-pin plastic SOJ.

 

ABSOLUTE MAXIMUM RATINGS*

Parameter Symbol Rating Unit
Voltage on Any Pin Relative to VSS VIN, VOUT -0.5 to Vcc+0.5V V
Voltage on VCC Supply Relative to VSS VCC -0.5 to 7.0 V
Power Dissipation Pd 1 W
Storage Temperature TSTG -65 to 150 °C
Operating Temperature Commercial TA 0 to 70 °C
Industrial TA -40 to 85 °C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

 

FUNCTIONAL BLOCK DIAGRAM                                      PIN CONFIGURATION(Top View)

K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAMK6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM

 

PACKAGE DIMENSIONS

   32-SOJ-400                                                                                              Units:millimeters/Inches

K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM

 

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-23616356

Fax: 86-755-23617396

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