Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

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FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip

China FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip supplier
FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip supplier FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip supplier

Large Image :  FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip

Product Details:

Place of Origin: Malaysia
Brand Name: FSC
Certification: Original Factory Pack
Model Number: FDS8858CZ

Payment & Shipping Terms:

Minimum Order Quantity: 100pcs
Price: Negotiation
Packaging Details: REEL
Delivery Time: 1 Day
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 5000PCS
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Detailed Product Description
Temperature Range: –55°C To +150 °C Typical Thermal Resistance: -7.3A
Voltage: -30V Forward Surge Current: 40-78 °C/w
Package: SOP-8 Factory Package: REEL

FDS8858CZ

Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0mΩ

P-Channel: -30V, -7.3A, 20.5mΩ

 

Features

Q1: N-Channel „ Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A „

Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel „

Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A „

Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A „

High power and handing capability in a widely used surface mount package

Fast switching speedt

 

General Description

These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

 

Application „

Inverter „ Synchronous Buck

 

ABSOLUTE MAXIMUM RATINGS

TA = 25°C unless otherwise noted

Symbol Parameter Q1 Q2 Unit
VDS Drain to Source Voltage 30 -30 V
VGS Gate to Source Voltage ±20 ±25 V
Id Drain Current - Continuous TA = 25°C 8.6 -7.3 A
-Pulsed 20 -20  
Pd Power Dissipation for Dual Operation 2.0 w
Power Dissipation for Single Operation    TA = 25°C 1.6
                                                                 TA = 25°C 0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C


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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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