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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

: Large Image : FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

Product Details:

Place of Origin:	America
Brand Name:	FAIRCHILD
Certification:	Original Factory Pack
Model Number:	FDP085N10A

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5600PCS

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Detailed Product Description

Drain To Source Voltage:	100V	Single Pulsed Avalanche Energy:	269mJ
Peak Diode Recovery Dv/dt:	6.0V/ns	Operating And Storage Temperature Range:	-55 To +175°C
High Light:	electronic integrated circuit , linear integrated circuits

Drain To Source Voltage:

100V

Single Pulsed Avalanche Energy:

269mJ

Peak Diode Recovery Dv/dt:

6.0V/ns

Operating And Storage Temperature Range:

-55 To +175°C

High Light:

electronic integrated circuit

linear integrated circuits

FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

Features

• RDS(on) = 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
• DC to DC Converters

• Synchronous Rectification for Telecommunication PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

Thermal Characteristics

Symbol	Parameter	Ratings	Units
RθJC	Thermal Resistance, Junction to Case	0.8	°C/W
RθJA	Thermal Resistance, Junction to Ambient	62.5	°C/W

Typical Performance Characteristics

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