Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

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Home ProductsPower Mosfet Transistor

P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

China P4NK60ZFP Power Mosfet Transistor high power mosfet transistors supplier

Large Image :  P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: P4NK60ZFP

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8760pcs
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Detailed Product Description
Drain-source Voltage: 600 V Drain-gate Voltage: 600 V
Gate- Source Voltage: ± 30 V Peak Diode Recovery Voltage Slope: 4.5 V/ns
Insulation Withstand Voltage: 2500 V Operating Junction Temperature: -55 To 150 °C
High Light:

power mosfet ic

,

multi emitter transistor

 

Stock Offer (Hot Sell)

Part No. Quantity Brand D/C Package
MAX191BCWG+ 2338 MAXIM 16+ SOIC-24
MAX1932ETC+T 3044 MAXIM 13+ QFN
MAX232EIDR 50000 TI 13+ SOP-16
MAX232IDW 9003 TI 11+ SOP-16
MAX253CSA+ 6562 MAXIM 14+ SOP-8
MAX3051EKA+T 3853 MAXIM 14+ SOT-23
MAX3061EEKA 4024 MAXIM 15+ SOT23-8
MAX3070EESD 5557 MAXIM 16+ SOP-14
MAX31865ATP+T 3707 MAXIM 16+ QFN20
MAX3221ECPWR 3059 TI 16+ TSSOP
MAX3224ECAP 4095 MAXIM 16+ SSOP-20
MAX3232CPWR 5697 TI 16+ TSSOP
MAX3232CUE 3986 MAXIM 16+ TSSOP
MAX3232EIDR 3667 TI 16+ SOP-16
MAX3238ECPWR 8331 TI 10+ TSSOP
MAX3243CDBR 3590 TI 14+ SSOP-28
MAX3243ECDBR 6741 TI 09+ SSOP-28
MAX32590-LNJ+ 553 MAXIM 13+ NA
MAX3311CUB 2302 MAXIM 16+ MSOP-10
MAX3311EEUB 2324 MAXIM 16+ MSOP-10
MAX3442EEPA+ 3095 MAXIM 16+ DIP-8
MAX3442EESA+T 5829 MAXIM 16+ SOP-8
MAX3486CSA 15889 MAXIM 16+ SOP-8
MAX3490CSA+ 11077 MAXIM 13+ SOP-8
MAX4080SASA+T 15089 MAXIM 16+ SOP-8
MAX418CPD 3034 MAXIM 14+ DIP-14
MAX4624EZT 15171 MAXIM 16+ SOT23-6
MAX4663CAE 2151 MAXIM 16+ SSOP-16
MAX472CPA 4115 MAXIM 15+ DIP-8
MAX491CPD+ 14840 MAXIM 16+ DIP-14

 

 

STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1

STB4NK60Z-STD4NK60Z-STD4NK60Z-1

 

N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK

Zener-Protected SuperMESH™Power MOSFET

 

■ TYPICAL RDS(on) = 1.76 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING REPEATIBILITY

 

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

 

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

■ LIGHTING

 

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP4NK60Z

STB4NK60Z

STB4NK60Z-1

STP4NK60ZFP

STD4NK60Z

STD4NK60Z-1

VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 4 4 (*) 4 A
ID Drain Current (continuous) at TC = 100°C 2.5 2.5 (*) 2.5 A
IDM (•) Drain Current (pulsed) 16 16 (*) 16 A
PTOT Total Dissipation at TC = 25°C 70 25 70 W
  Derating Factor 0.56 0.2 0.56 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 - V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

-55 to 150

°C

(•) Pulse width limited by safe operating area

(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

 

P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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