Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

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Home ProductsPower Mosfet Transistor

MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

China MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor supplier

Large Image :  MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: MMBF170

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8600pcs
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Detailed Product Description
Drain-Source Voltage: 60 V Drain-Gate Voltage (RGS < 1MW): 60 V
Gate-Source Voltage: ± 20 V Drain Current - Continuous: 500 MA
Operating And Storage Temperature Range: -55 To 150 °C
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silicon power transistors

 

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

 

General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

 

Features

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter BS170 MMBF170 Unit
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1MW) 60 V
VGSS Gate-Source Voltage ± 20 V
ID

Drain Current - Continuous

                      - Pulsed

500 500 mA
1200 800 mA
PD

Maximum Power Dissipation

Derate Above 25°C

830 300 mW
6.6 2.4 mW/°C
TJ ,TSTG Operating and Storage Temperature Range -55 to 150 °C
TL Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 °C
  THERMAL CHARACTERISTICS
RθJA Thermal Resistacne, Junction-to-Ambient 150 417 °C/W

 

MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

               

                 Switching Test Circuit.                                   Switching Waveforms.

MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

 

 

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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