Anterwell Technology Ltd.

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NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor

China NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor supplier

Large Image :  NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Details:

Place of Origin: Philippines
Brand Name: FAIRCHILD
Certification: Original Factory Pack
Model Number: NDS356AP

Payment & Shipping Terms:

Minimum Order Quantity: 20
Price: Negotiate
Packaging Details: please contact me for details
Delivery Time: 1
Payment Terms: T/T, Western Union,Paypal
Supply Ability: 20000
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Detailed Product Description
Drain-Source Voltage: -30 V Gate-Source Voltage - Continuous: ±20 V
Maximum Drain Current - Continuous (: ±1.1 A Maximum Power Dissipation: 0.5 W
Operating And Storage Temperature Range: -55 To 150 °C
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NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor


General Description

SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

 

Features

►-1.1 A, -30 V, RDS(ON) = 0.3 W @ VGS=-4.5 V

                      RDS(ON) = 0.2 W @ VGS=-10 V.

►Industry standard outline SOT-23 surface mount package

using proprietary SuperSOTTM-3 design for superior thermal

and electrical capabilities.

►High density cell design for extremely low RDS(ON).

►Exceptional on-resistance and maximum DC current capability.

 

NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol  Parameter  NDS356AP Units
VDSS  Drain-Source Voltage -30  V
VGSS  Gate-Source Voltage - Continuous  ±20  V
ID Maximum Drain Current - Continuous ±1.1  A
PD Maximum Power Dissipation 0.5  W
TJ ,TSTG Operating and Storage Temperature Range -55 to 150  °C

NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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