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BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

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BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

: Large Image : BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

Product Details:

Place of Origin:	Original
Brand Name:	ONSEMI
Certification:	Original Factory Pack
Model Number:	BSS138LT1G

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

VDSS:	50 Vdc	VGS:	± 20 Vdc
I D:	200 MA	PD:	225 MW
TL:	260 °C
High Light:	power mosfet ic , silicon power transistors

Power MOSFET 200 mA, 50 V N−Channel SOT−23

Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Features BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

• Pb−Free Packages are Available

• Low Threshold Voltage (VGS(th):

0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications

• Miniature SOT−23 Surface Mount Package Saves Board Space

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08.

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	50	Vdc
Gate−to−Source Voltage − Continuous	V_GS	± 20	Vdc
Total Power Dissipation @ TA = 25°C	P_D	225	mW
Operating and Storage Temperature Range	T_J, T_stg	− 55 to 150	°C
Thermal Resistance − Junction−to−Ambient	R_JA	556	°C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds	TL	260	°C