Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

Home
Products
About Us
Factory Tour
Quality Control
Contact Us
Request A Quote
Home ProductsPower Mosfet Transistor

TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

I'm Online Chat Now

TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

China TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor supplier

Large Image :  TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: TLP734

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 6800pcs
Contact Now
Detailed Product Description
Storage Temperature: -55~125 °C Operating Temperature: -40~100 °C
Lead Soldering Temperature (10 S): 260 °C Total Package Power Dissipation: 250 MW
Total Package Power Dissipation Derating (Ta ≥ 25°C): -2.5 MW / °C Isolation Voltage: 4000 Vrms
High Light:

power mosfet ic

,

silicon power transistors

 

TOSHIBA Photocoupler GaAs Ired&Photo−Transistor

TLP733, TLP734

 

Office Machine

Household Use Equipment

Solid State Relay

Switching Power Supply

 

The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.

TLP734 is no−base internal connection for high−EMI environments.

 

  • Collector−emitter voltage: 55 V (min.) 
  • Current transfer ratio: 50% (min.)                                   
    • Rank GB: 100% (min.) 
  • UL recognized: UL1577, file no. E67349 
  • BSI approved: BS EN60065: 1994
    • Certificate no. 7364
    • BS EN60950: 1992
    • Certificate no. 7365 
  • SEMKO approved: SS4330784
    • Certificate no. 9325163, 9522142 
  • Isolation voltage: 4000 Vrms (min.) 
  • Option (D4) type
    • VDE approved: DIN VDE0884 / 06.92,
      • Certificate no. 74286, 91808
    • Maximum operating insulation voltage: 630, 890 VPK
    • Highest permissible over voltage: 6000, 8000 VPK

(Note) When a VDE0884 approved type is needed, please designate the “Option (D4)”

 

 

                                            7.62 mm pich       10.16 mm pich

                                            standard type       TLP×××F type  

Creepage distance             : 7.0 mm (min.)      8.0 mm (min.)

Clearance                           : 7.0 mm (min.)      8.0 mm (min.)

Internal creepage path        : 4.0 mm (min.)      4.0 mm (min.)

Insulation thickness             : 0.5 mm (min.)      0.5 mm (min.) 

 

 

Maximum Ratings (Ta = 25°C)

                                  Characteristic   Symbol    Rating   Unit
 LED  Forward current      IF      60   mA
 Forward current derating (Ta ≥ 39°C)   ∆IF / °C     -0.7  mA / °C
 Peak forward current (100 µs pulse, 100 pps)     IFP       1    A
 Reverse voltage     VR       5    V
 Junction temperature      Tj      125   °C
Detector  Collectoremitter voltage    VCEO       55    V 
 Collectorbase voltage (TLP733)    VCBO       80    V
 Emittercollector voltage    VECO        7    V
 Emitterbase voltage (TLP733)    VEBO        7    V
 Collector current      IC       50   mA
 Power dissipation     PC      150   mW
 Power dissipation derating (Ta ≥ 25°C)   ∆PC / °C      -1.5  mW / °C
 Junction temperature     Tj      125    °C
  Storage temperature range    Tstg    -55~125    °C
  Operating temperature range    Topr    -40~100    °C
  Lead soldering temperature (10 s)    Tsol       260    °C
  Total package power dissipation     PT       250   mW
  Total package power dissipation derating (Ta ≥ 25°C)   ∆PT / °C      -2.5  mW / °C
  Isolation voltage (AC, 1 min., R.H.≤ 60%)    BVS      4000   Vrms

 

 

Weight: 0.42 g

TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor                Pin Configurations (top view)

 

               TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

           TLP733

           1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base

 

           TLP734

           1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

Send your inquiry directly to us (0 / 3000)