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Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching

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Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching

: Large Image : Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching

Product Details:

Place of Origin:	Japan
Brand Name:	VISHAY
Certification:	Original Factory Pack
Model Number:	IRFBC40PBF

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

VDS (V):	600	RDS(on) (Ω):	VGS = 10 V
Qg (Max.) (nC):	60	Qgs (nC):	8.3
Qgd (nC):	30	Configuration:	Single
High Light:	multi emitter transistor , silicon power transistors

Power MOSFET

Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry