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AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect Transistor

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AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect Transistor

: Large Image : AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect Transistor

Product Details:

Place of Origin:	100% new & original
Brand Name:	ALPHA
Certification:	Original Factory Pack
Model Number:	AO3400A

Payment & Shipping Terms:

Minimum Order Quantity:	100pcs
Price:	negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,Payapl
Supply Ability:	6000PCS

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Detailed Product Description

Drain-Source Voltage:	30 V	Gate-Source Voltage:	±12 V
Pulsed Drain Current B:	25 A	Continuous Drain:	TA=25°C
Junction And Storage Temperature Range:	-55 To 150°C
High Light:	power mosfet ic , silicon power transistors

AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect Transistor AO3400A

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).

Features

VDS (V) = 30V

ID = 5.7A (VGS = 10V)

RDS(ON) < 26.5mΩ (VGS = 10V)

RDS(ON) < 32mΩ (VGS = 4.5V)

RDS(ON) < 48mΩ (VGS = 2.5V)

Thermal Characteristics
Parameter		Symbol	Typ	Max	Units
Maximum Junction-to-Ambient ^A	t ≤ 10s	R_θJA	70	90	°C/W
Maximum Junction-to-Ambient^A	Steady-State	R_θJA	100	125	°C/W
Maximum Junction-to-Lead ^C	Steady-State	R_θJL	63	80	°C/W