ATF26884 Power Mosfet Transistor General Purpose Gallium Arsenide FET

2–16 GHz General Purpose Gallium Arsenide FET

ATF-26884

Features

• High Output Power: 18.0 dBm Typical P _{1 dB} at 12 GHz

• High Gain: 9.0 dB Typical G_SS at 12 GHz

• Low Cost Plastic Package

• Tape-and-Reel Packaging Option Available^[1]

Description

The ATF-26884 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range.

This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

84 Plastic Package

ATF-26884 Absolute Maximum Ratings

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TCASE TEMPERATURE = 25°C.

3. Derate at 3.3 mW/°C for T_CASE > 92.5°C.

4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information.

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