Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

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Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

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I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

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Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

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We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

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Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components

China Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components supplier

Large Image :  Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components

Product Details:

Place of Origin: Japan
Brand Name: RENESAS
Certification: Original Factory Pack
Model Number: 2SK1305

Payment & Shipping Terms:

Minimum Order Quantity: 20
Price: Negotiate
Packaging Details: please contact me for details
Delivery Time: 1
Payment Terms: T/T, Western Union,Paypal
Supply Ability: 30000
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Detailed Product Description
Shipment: DHL, FedeX, UPS, EMS Etc Main Line: IC Components, Transistor, Diode, Module,Capacitor Etc
Channel Dissipation: 25W Mold: High Speed Power Switching
D/C: °C Package: TO-220F

Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components

 

 

 

Original Transistor 2SK1305 Silicon N Channel MOS FET TO-3P

 

 

Features

 

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device  Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

 

 

Outline

 

Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components

 

Absolute Maximum Ratings

Item Symbol Rating Unit
Drain to source voltage VDSS 100 V
Gate to source voltage VGSS ±20 V
Drain current ID 10 A
Drain peak current ID(pulse)*1 40 A
Body to drain diode reverse drain current IDR 10 A
Channel dissipation Pch*2 25 W
Channel temperature Tch 150 °C
Storage temperature Tstg -50 to +150 °C

 

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

 

Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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