Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

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BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors

China BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors supplier
BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors supplier BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors supplier

Large Image :  BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: BT151-500R

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8200pcs
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Detailed Product Description
Thermal Resistance Junction To Ambient: 60 K/W Average On-state Current: 7.5 A
RMS On-state Current: 12 A Non-repetitive Peak On-state Current: 100 A
Storage Temperature: -40 To 150 ˚C Operating Junction Temperature: 125 ˚C
High Light:

npn smd transistor

,

multi emitter transistor

 

Thyristors                                                            

BT151 series

 

GENERAL DESCRIPTION

Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

 

  PINNING - TO220AB                     PIN CONFIGURATION                  SYMBOL

BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors

 

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDRM, VRRM Repetitive peak off-state voltages   -

-500R

5001

-650R

6501

-800R

800

V
IT(AV) Average on-state current half sine wave; Tmb ≤ 109 ˚C - 7.5 A
IT(RMS) RMS on-state current all conduction angles - 12 A
ITSM Non-repetitive peak on-state current half sine wave; Tj = 25 ˚C prior to surge -    
I2 t I2 t for fusing

t = 10 ms

t = 8.3 ms

t = 10 ms

-

100

110

50

A

A

A2 s

dIT/dt Repetitive rate of rise of on-state current after triggering

ITM = 20 A; IG = 50 mA;

dIG/dt = 50 mA/µs

- 50 A/µs
IGM Peak gate current   - 2 A
VGM Peak gate voltage   - 5 V
VRGM Peak reverse gate voltage   - 5 V
PGM Peak gate power   - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature   -40 150 ˚C
Tj Operating junction temperature   - 125 ˚C

 

MECHANICAL DATA

BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

 

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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