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TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

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TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

: Large Image : TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

Product Details:

Place of Origin:	Taiwan
Brand Name:	TOSHIBA
Certification:	Original Factory Pack
Model Number:	TPC8111

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	580PCS

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Detailed Product Description

VDSS:	−30 V	VDGR:	−30 V
VGSS:	±20 V	ID:	−11 A
PD:	1.9 W
High Light:	power mosfet ic , silicon power transistors

TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to small and thin package

• Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 23 S (typ.)

• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)

• Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution

Maximum Ratings (Ta = 25°C)

Characteristics	Symbol	Rating	Unit
Drain-source voltage	VDSS	−30	V
Drain-gate voltage (RGS = 20 kΩ)	VDGR	−30	V
Gate-source voltage	VGSS	±20	V
Drain power dissipation (t = 10 s)	PD	1.9	W
Drain power dissipation (t = 10 s)	PD	1.0	W
Single pulse avalanche energy	EAS	31.5	mJ
Avalanche current	IAR	−11	A
Repetitive avalanche energy	EAR	0.19	mJ
Channel temperature	Tch	150	°C

TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

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