Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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Home ProductsPower Mosfet Transistor

TPC8020-H Field Effect Power Mosfet Transistor Silicon N Channel MOS Type silicon circuit board

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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TPC8020-H Field Effect Power Mosfet Transistor Silicon N Channel MOS Type silicon circuit board

China TPC8020-H Field Effect Power Mosfet Transistor Silicon N Channel MOS Type silicon circuit board supplier

Large Image :  TPC8020-H Field Effect Power Mosfet Transistor Silicon N Channel MOS Type silicon circuit board

Product Details:

Place of Origin: Taiwan
Brand Name: TOSHIBA
Certification: Original Factory Pack
Model Number: TPC8020-H

Payment & Shipping Terms:

Minimum Order Quantity: 5pcs
Price: Negotiation
Packaging Details: please contact me for details
Delivery Time: 1 Day
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 580PCS
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Detailed Product Description
VDSS: 30 V VDGR: 30 V
VGSS: ±20 V ID: 13 A
IDP: 52 A
High Light:

power mosfet ic

,

multi emitter transistor

TPC8020-H Field Effect Transistor Silicon N Channel MOS Type silicon circuit board

TPC8020-H Field Effect Power Mosfet Transistor Silicon N Channel MOS Type silicon circuit board· Small footprint due to small and thin package

· High-speed switching · Small gate charge: Qg = 23 nC (typ.)

· Low drain-source ON resistance: RDS (ON) = 6.8 mO (typ.)

· High forward transfer admittance: |Yfs| =32 S (typ.)

· Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

· Enhancement mode: Vth = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA)

 

 

 

 

 

 

 

 

 

 

 

 

Thermal Characteristics

Characteristics  Symbol  Max Unit

Thermal resistance, channel to ambient

(t = 10 s) (Note 2a)

Rth

(ch-a) 

65.8  °C/W

Thermal resistance, channel to ambient

(t = 10 s) (Note 2b)

Rth

(ch-a)

125  °C/W

 

 

 

TPC8020-H Field Effect Power Mosfet Transistor Silicon N Channel MOS Type silicon circuit board

 

 

 

 

TPC8020-H Field Effect Power Mosfet Transistor Silicon N Channel MOS Type silicon circuit board

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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